Enabling wafer growth
نویسندگان
چکیده
منابع مشابه
Enabling Manufacturing Productivity Improvement and Test Wafer Cost Reduction
Today’s wafer fabrication plants must carefully balance the need to increase productivity while simultaneously reducing variable costs. There are a couple of main areas where process control (metrology and inspection) equipment can help minimize variable cost. The first is reducing consumables – minimizing the number of wafers that are processed for non-revenue operations, i.e., test wafers. Se...
متن کاملKey enabling technology for wafer-based manufacturing technology
Photolithography is the engine that empowered semiconductor industry to reduce the minimum feature size of the components of a microchip from some 50 microns in the 1960s to below 14 nanometers today. Diffractive and refractive micro-optical components play a decisive role in modern photolithography systems, e.g. for laser line width narrowing, laser beam shaping (customized illumination), as p...
متن کاملDefect control in silicon crystal growth and wafer processing
Accurate control of the defectivity of silicon crystals and wafers is a subject of immense importance to both the silicon and IC industries. Exploding costs of wafer development and production as well as the processing of 300mm wafers means that predictive defect engineering is now, more than ever a requirement for both industries. There is little scope any more for iterative approaches to thes...
متن کاملGrowth of wafer-scale MoS2 monolayer by magnetron sputtering.
The two-dimensional layer of molybdenum disulfide (MoS2) exhibits promising prospects in the applications of optoelectronics and valleytronics. Herein, we report a successful new process for synthesizing wafer-scale MoS2 atomic layers on diverse substrates via magnetron sputtering. Spectroscopic and microscopic results reveal that these synthesized MoS2 layers are highly homogeneous and crystal...
متن کاملMicrostructure evolution and abnormal grain growth during copper wafer bonding
Evolution of microstructure morphologies and grain orientations of Cu-Cu bonded wafers during bonding and annealing were studied by means of transmission electron microscopy, electron diffraction and X-ray diffraction. The bonded Cu grain structure reaches steady state after post-bonding anneal. An abnormal (220) grain growth was observed during the initial bonding process. Upon annealing, the ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: III-Vs Review
سال: 2000
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(00)88876-6